- Capacitance @ Vr, F：
-
- Current - Reverse Leakage @ Vr：
-
- Operating Temperature - Junction：
-
- Package / Case：
-
- Reverse Recovery Time (trr)：
-
- Supplier Device Package：
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16 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
Vishay | DIODE GEN PURP 100... |
40,468
In-stock
|
Inquiry | ||
|
|
Vishay | DIODE GEN PURP 100... |
43,103
In-stock
|
Inquiry | ||
|
Taiwan Semiconductor | 25NS, 4A, 100V, ULTRA... |
44,277
In-stock
|
Inquiry | ||
|
Taiwan Semiconductor | 25NS, 4A, 200V, ULTRA... |
44,312
In-stock
|
Inquiry | ||
|
Taiwan Semiconductor | 25NS, 4A, 100V, ULTRA... |
47,800
In-stock
|
Inquiry | ||
|
|
Taiwan Semiconductor | 25NS, 4A, 200V, ULTRA... |
46,789
In-stock
|
Inquiry | ||
|
|
Vishay | DIODE GEN PURP 100... |
45,703
In-stock
|
Inquiry | ||
|
|
Taiwan Semiconductor | 25NS, 4A, 100V, ULTRA... |
45,091
In-stock
|
Inquiry | ||
|
|
Taiwan Semiconductor | 25NS, 4A, 200V, ULTRA... |
47,555
In-stock
|
Inquiry | ||
|
|
Vishay | DIODE GEN PURP 200... |
47,790
In-stock
|
Inquiry | ||
|
Nexperia | PNE20040EPE/SOT1289B... |
45,563
In-stock
|
Inquiry | ||
|
|
Nexperia | PNE20040EPE-Q/SOT128... |
46,780
In-stock
|
Inquiry | ||
|
|
Vishay | DIODE GEN PURP 200... |
45,708
In-stock
|
Inquiry | ||
|
|
Vishay | DIODE GEN PURP 200... |
48,689
In-stock
|
Inquiry | ||
|
|
Vishay | DIODE GEN PURP 100... |
48,776
In-stock
|
Inquiry | ||
|
|
Vishay | DIODE GEN PURP 200... |
45,094
In-stock
|
Inquiry |